Ionisation of dopants

class semiconductor.electrical.Ionisation(**kwargs)

Depending on a dopant level from a band, and the thermal energy available, a dopant is electrical active (donating or accepting an electron to the band) or inactive. It can take the inputs:

input

material: (string)

The elemental symbol for the material e.g ‘Si’.

temp: (float)

The temperature of the sample in kelvin. This can not be an array.

author: (string)

The author of the ionisation model being used

ni_author: (string)

The author of the intrinsic carrier concentraion being used.

check_models()

Plots a check of the modeled data against Digitised data from either papers or from other implementations of the model.

update(**kwargs)

Calculates the number of ionisied impurities

Inputs:

N_imp: (float or numpy array)

number of the impurity in the material

ne: (float or numpy array)

number of electrons

nh: (float or numpy array)

number of holes

impurity: (str)

the element name of the impurity

temp: (optional)

the temperature in Kelvin to be evaluated

author: (optional str)

the author of the impurity model to use

output:

the number of ionised impurities

update_dopant_ionisation(N_dop, nxc, impurity, **kwargs)

This is a special function used to determine the number of ionised dopants given a number of excess carriers, and a single dopant type.

inputs:

N_dop: (float; cm^-3)

The dopant density

nxc: (float; cm^-3)

The excess carrier density

impurity: (str)

The name of the dopant used e.g. boron, phosphorous. The dopants available depend on the model used

output:

N_idop: (float cm^-2)

The number of ionised dopants